Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• within the forbidden gap. These states lead to a reduction in bandgap energy and an upward shift of the Fermi level [41][42]. This is the reason behind the observed reduction in bandgap with higher thicknesses (Figure 2b,c) [43]. To probe the Fermi level position, KPFM is a useful tool to acquire

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• (HOMOs) have been determined. Levels have been calculated by subtracting from 21.2 eV (He I) the Fermi level position from the graph in Figure 9c and adding the Fermi level position relative to the HOMO from Figure 9d. The HOMO values obtained are −6.0 eV, −5.3 eV, −6.0 eV, −5.7 eV, and −4.4 eV for QD480

Non-equilibrium electron transport induced by terahertz radiation in the topological and trivial phases of Hg_1−xCd_xTe

• Alexandra V. Galeeva,
• Alexey I. Artamkin,
• Alexey S. Kazakov,
• Sergey N. Danilov,
• Sergey A. Dvoretskiy,
• Nikolay N. Mikhailov,
• Ludmila I. Ryabova and
• Dmitry R. Khokhlov

Beilstein J. Nanotechnol. 2018, 9, 1035–1039, doi:10.3762/bjnano.9.96

• concentrations correspond to the Fermi level position not lower than at 3 meV, 5 meV, and 7 meV above the conduction band edge for the samples with x = 0.13, 0.15, 0.17, respectively. The energy distance between the conduction band and the light-hole valence subband used in the Kane model calculations was

• heterojunction area [30][31][32]. Beside that, 2D topological Dirac states are formed at the position z0 corresponding to the gap absence between the conduction and light hole bands (Figure 3). To the right of z0, the bulk semiconductor energy spectrum is gapless. The Fermi level position in such a structure

The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene

• Egor A. Kolesov,
• Mikhail S. Tivanov,
• Olga V. Korolik,
• Olesya O. Kapitanova,
• Xiao Fu,
• Hak Dong Cho,
• Tae Won Kang and
• Gennady N Panin

Beilstein J. Nanotechnol. 2018, 9, 704–710, doi:10.3762/bjnano.9.65

• graphene indicates that under electronic doping more active adsorption occurs, balancing the “excess” electron density through opposite-sign charge carrier introduction and subsequent recombination, and moving the Fermi level position closer to a normal value. As seen from Figure 3a, in addition to an

Energy-level alignment at interfaces between manganese phthalocyanine and C₆₀

• Daniel Waas,
• Florian Rückerl,
• Martin Knupfer and
• Bernd Büchner

Beilstein J. Nanotechnol. 2017, 8, 927–932, doi:10.3762/bjnano.8.94

• deposited first and the metal substrate (gold) varies going from MnPc to C60 with the consequence of a different Fermi-level position in the layer stack. Moreover, in previous studies [25][53] the importance of interface morphologies, molecular orientations and the resulting density of states on the energy

Impact of air exposure and annealing on the chemical and electronic properties of the surface of SnO₂ nanolayers deposited by rheotaxial growth and vacuum oxidation

• Monika Kwoka and
• Maciej Krzywiecki

Beilstein J. Nanotechnol. 2017, 8, 514–521, doi:10.3762/bjnano.8.55

• the distance between the valence band edge and the Fermi level energy. This was attributed to oxygen diffusion through the porous SnO2 surface as measured by atomic force microscopy. Keywords: Fermi level position; RGVO nanolayers; rheotaxial growth and vacuum oxidation (RGVO); surface chemistry; tin

• SnO2 nanolayers. Such adsorbates are often creating so-called surface dipoles [37] influencing the local charge distribution and, in consequence, the energy distance between the Fermi level position and the top of valence band at the surface, EF − EV. This statement is justified because the observed in

Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

• Christoph Schreyvogel,
• Vladimir Polyakov,
• Sina Burk,
• Helmut Fedder,
• Andrej Denisenko,
• Felipe Fávaro de Oliveira,
• Ralf Wunderlich,
• Jan Meijer,
• Verena Zuerbig,
• Jörg Wrachtrup and
• Christoph E. Nebel

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

• Fermi level crosses this level. A control of the Fermi-level position can be performed either passively by the chemical control via surface termination with oxygen [8][9][10] or fluorine [14] or actively by an electrical control with structures such as a solution-gated field effect transistor [15], a

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

• Urs Gysin,
• Thilo Glatzel,
• Thomas Schmölzer,
• Adolf Schöner,
• Sergey Reshanov,
• Holger Bartolf and
• Ernst Meyer

Beilstein J. Nanotechnol. 2015, 6, 2485–2497, doi:10.3762/bjnano.6.258

• Fermi-level position on SiC samples is strongly affected by surface preparation and material properties [44]. Figure 6 shows a KPFM measurement of a SiC calibration sample consisting of a 2 μm thick nitrogen-doped n-type (NN = 2 × 1018 cm−3) followed by a 4 μm thick aluminium doped p-type (NAl = 1